Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)RINUS TEK PO LEE; DONG ZHI CHI; YEO, Yee-Chia et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1458-1465, issn 0018-9383, 8 p.Article

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin WidthsLEE, Rinus Tek-Po; LIOW, Tsung-Yang; TAN, Kian-Ming et al.IEEE electron device letters. 2008, Vol 29, Num 4, pp 382-385, issn 0741-3106, 4 p.Article

N-channel FinFETs with 25-nm gate length and schottky-barrier source and drain featuring ytterbium silicideLEE, Rinus T. P; EU-JIN LIM, Andy; TAN, Kian-Ming et al.IEEE electron device letters. 2007, Vol 28, Num 2, pp 164-167, issn 0741-3106, 4 p.Article

Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire ChannelEU JIN TAN; PEY, Kin-Leong; SINGH, Navab et al.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1167-1170, issn 0741-3106, 4 p.Article

Nickel-Silicide : Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/DrainLEE, Rinus T. P; YANG, Li-Tao; DONG ZHI CHI et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 89-92, issn 0741-3106, 4 p.Article